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| 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO-3PFM High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter 2 1 1 1. Gate 1. Gate 2. Drain 2. Drain 3. Source 3. Source 3 23 Table 1 Ordering Information Type No 2SK1831 2SK1832 VDSS 450V 500V ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage K1831 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- K1832 Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C VGSS ID ID(pulse)* IDR Pch** Tch Tstg -------------- 500 30 10 30 10 50 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1831, 2SK1832 Table 3 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage K1831 Symbol V(BR)DSS Min 450 500 V(BR)GSS IGSS IDSS 30 Typ -- -- -- Max -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 Unit V Test Conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- K1832 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1831 ---------------------- --------------------------------------------------------------------------------------------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- K1832 VGS(off) 2.0 -- -- 4.0 -- 0.6 0.7 7.0 3.0 0.8 0.9 -- S ID = 5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 V Gate to source cutoff voltage -------------------- VDS = 400 V, VGS= 0 ID = 1 mA, VDS = 10 V VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Static drain to source K1831 RDS(on) on state resistance -------- K1832 Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = 5 A VGS = 10 V * ---------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1050 280 40 15 60 90 45 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 350 -- ns -------------------------------------------------------------------------------------- See characteristic curves of 2SK1157, 2SK1158 2SK1831, 2SK1832 Power vs. Temperature Derating 75 Channel Dissipation Pch (W) Maximum Safe Operation Area 50 30 10 Drain Current I D (A) 10 D C 50 3 1 0.3 0.1 0.05 25 = 10 O m pe s ra (1 tio sh n ot (T Operation in this ) c = area is limited 25 C by R DS (on) ) s m PW 10 s 0 s 1 Ta = 25C K1831 K1832 30 100 300 1000 0 50 100 150 1 3 10 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch - c(t) = s(t). ch - c ch - c = 2.50C/W, Tc = 25C PDM 0.03 0.01 10 1S hot se Pul PW T PW D = ---- T 1 10 100 1m 10 m 100 m Pulse Width PW (S) |
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